Scallop Reduction in Bosch Process Using a Small Chamber and Rapid Gas Switching Rate

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  • Tanaka Hiroyuki
    National Institute of Advanced Industrial Science and Technology National Institute of Advanced Industrial Science and Technology
  • Ogiso Hisato
    National Institute of Advanced Industrial Science and Technology National Institute of Advanced Industrial Science and Technology
  • Nakano Shizuka
    National Institute of Advanced Industrial Science and Technology National Institute of Advanced Industrial Science and Technology
  • Hayami Toshihiro
    National Institute of Advanced Industrial Science and Technology SPP Technologies Co., Ltd.
  • Miyazaki Toshiya
    National Institute of Advanced Industrial Science and Technology SPP Technologies Co., Ltd.
  • Khumpuang Sommawan
    National Institute of Advanced Industrial Science and Technology National Institute of Advanced Industrial Science and Technology
  • Hara Shiro
    National Institute of Advanced Industrial Science and Technology National Institute of Advanced Industrial Science and Technology

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Other Title
  • ミニマルエッチング装置を用いたボッシュプロセスにおけるスキャロップの低減化
  • ミニマルエッチング ソウチ オ モチイタ ボッシュプロセス ニ オケル スキャロップ ノ テイゲンカ

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<p>We have developed an inductively-coupled plasma-reactive ion etching system (ICP-RIE) in a human-size machine of minimal fab for processing a half-inch wafer. The etching system has performed a Bosch etching process with a short switching cycle in a tiny chamber with a volume of 1/4ℓ. For the tiny chamber, a plasma density generated by typical radio frequency of 13.56 MHz is too low according to the small space of the chamber. Thus, a higher frequency of 100 MHz is employed for a high density plasma operation although the power consumed is only ~40W. The Si etching rate of the Bosch process is ~2.5µm/min. Moreover, owing to a fast residence time of ~0.2 second, deposition gas (C4F8) and etching gas (SF6) are exchanged rapidly, which makes a Bosch cycle time of only 2 seconds. The resultant etching sidewall of Si structure becomes a scallop-less straight wall.</p>

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