EFFECT OF POTASSIUM ION ON ANISOTROPY OF TMAH
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- Tabata Osamu
- Ritsumeikan University
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- Yashima Manabu
- Ritsumeikan University
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- Yoshioka Tetsuo
- Nagoya University
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- Sato Kazuo
- Nagoya University
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Abstract
We have clarified the effect of potassium ion addition to TMAH solution on orientation dependence of etching rate in silicon anisotropic etching and etched surface roughness. Hemispherical specimen of single crystal silicon and wagon wheel pattern were used for experiments. The etching rate in <011> direction decreases dramatically, etching rate in <111> direction increases and surface roughness decreased with adding potassium ion in TMAH.
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 120 (7), 327-332, 2000
The Institute of Electrical Engineers of Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390001204460327936
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- NII Article ID
- 10005725545
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL BIB ID
- 5390519
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed