Development of InGaAs photodiodes for near-infrared spectroscopy
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- Wada Morio
- Yokogawa Electric Co.
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- Araki Shoujiro
- Yokogawa Electric Co.
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- Kudou Takahiro
- Yokogawa Electric Co.
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- Umezawa Toshimasa
- Yokogawa Electric Co.
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- Nakajima Shinichi
- Yokogawa Electric Co.
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- Ueda Toshitsugu
- Yokogawa Electric Co.
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Description
Lattice-mismatched InGaAs photodiodes with low dark current and very wide wavelength spectral response for near-infrared spectroscopy applications are presented. We have demonstrated almost complete relaxation of the strain by using the composition-graded InAsP buffer and also shown good reproducibility of the PD fabrication process.
Journal
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- IEEJ Transactions on Sensors and Micromachines
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IEEJ Transactions on Sensors and Micromachines 122 (1), 29-34, 2002
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204461445888
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- NII Article ID
- 10007656797
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- NII Book ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
- http://id.crossref.org/issn/13418939
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- NDL BIB ID
- 6025948
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed