Development of InGaAs photodiodes for near-infrared spectroscopy
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- Wada Morio
- Yokogawa Electric Co.
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- Araki Shoujiro
- Yokogawa Electric Co.
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- Kudou Takahiro
- Yokogawa Electric Co.
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- Umezawa Toshimasa
- Yokogawa Electric Co.
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- Nakajima Shinichi
- Yokogawa Electric Co.
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- Ueda Toshitsugu
- Yokogawa Electric Co.
この論文をさがす
説明
Lattice-mismatched InGaAs photodiodes with low dark current and very wide wavelength spectral response for near-infrared spectroscopy applications are presented. We have demonstrated almost complete relaxation of the strain by using the composition-graded InAsP buffer and also shown good reproducibility of the PD fabrication process.
収録刊行物
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- 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）
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電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 122 (1), 29-34, 2002
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204461445888
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- NII論文ID
- 10007656797
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
- http://id.crossref.org/issn/13418939
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- NDL書誌ID
- 6025948
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
