書誌事項
- タイトル別名
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- Transition Edge X-ray Sensor Using Anodic Bonding Wafer
- 解説 陽極接合ウエハーを用いたTransition Edge X-ray Sensor
- カイセツ ヨウキョク セツゴウ ウエハー オ モチイタ Transition Edge X ray Sensor
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説明
We describe the fabrication of Transition Edge X-ray Sensor(TES) using anodic bonding wafer that is suitable for large format array that is necessary for industrial application and astronomy. We also report the performance of TES for single pixel. The characteristic points of our fabrication are 1) use of silicon-to-glass bonding(anodic bonding) wafer, yielding the large mechanical strength of the wafer, 2) only front side patterning and etching, yielding the easy fabrication. The energy resolution of TES operated at 113 mK was 9.2 eV(FWHM) for Mn K<1(5899 eV) and effective decay time(τeff) 71 μs. The energy resolution is 10 times better than conventional silicon-detector(130eV) and the count rate(1/6τeff) reached about 2.4 kcps.
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 122 (11), 517-522, 2002
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204461460096
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- NII論文ID
- 10010455183
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 6345313
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可