Fabrication of Narrow-gapped Dual Si AFM Tips by Mechanically Polishing-back for Selective Trench Sidewalls Protection
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- Kawashima Kenta
- Graduate school of Science and Engineering, Yamagata University
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- Makino Eiji
- Graduate school of Science and Technology, Hirosaki University
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- Mineta Takashi
- Graduate school of Science and Engineering, Yamagata University
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説明
We developed a fabrication process of narrow-gapped twin nano-tips for atomic force microscopy (AFM) dual probes. A tetrahedral dual tip consisting of an inclined crystalline Si (111) plane and two dry-etched vertical planes was fabricated using deep reactive ion etching (D-RIE) to form a (110)-oriented narrow trench, thermal oxidation and additively refilling the trench with resin to protect the sidewalls, mechanically polishing-back the top resin and SiO2 layers to expose the Si (100) surface, and anisotropically etching the crystalline Si to form the (111) plane. The mechanically polished SiO2 thin film and resin layer were used to protect the trench sidewalls thereby preventing the gap between the Si tips from widening because of oxidation. A dual tip with a 450 nm gap was obtained by using the fabrication process. In addition to protecting the Si sidewalls with a SiO2 thin film, the resin refilling prevented abrasive particles from penetrating into the trench.
収録刊行物
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- 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）
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電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 134 (4), 74-78, 2014
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204462082816
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- NII論文ID
- 130003391592
- 40020067338
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 025466802
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
