Band alignment and optical properties of (ZrO<sub>2</sub>)<sub>0.66</sub>(HfO<sub>2</sub>)<sub>0.34</sub> gate dielectrics thin films on <i>p</i>-Si (100)

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  • Shin Hye Chung
    Department of Physics, Chungbuk National University
  • Son Lee Seul
    Department of Physics, Chungbuk National University
  • Kim Kyeom Ryong
    Department of Physics, Chungbuk National University
  • Oh Suhk Kun
    Department of Physics, Chungbuk National University
  • Kang Hee Jae
    Department of Physics, Chungbuk National University
  • Tahir Dahlang
    Department of Physics, Hasanuddin University
  • Heo Sung
    Analytical Engineering Center, Samsung Advanced Institute of Technology
  • Chung Jae Gwan
    Analytical Engineering Center, Samsung Advanced Institute of Technology
  • Lee Jae Cheol
    Analytical Engineering Center, Samsung Advanced Institute of Technology
  • Tougaard Sven
    Department of Physics and Chemistry, University of Southern Denmark

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  • Band alignment and optical properties of (ZrO2)0.66(HfO2)0.34 gate dielectrics thin films on p-Si(100)

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Abstract

(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO2)0.66(HfO2)0.34 dielectric thin film grown on Si substrate were about 5.34, 2.35 and 1.87 eV, respectively. The band alignment is similar to that of ZrO2 thin film. In addition, The dielectric function ε(κ,ω), index of refraction n and the extinction coefficient k for the (ZrO2)0.66(HfO2)0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε(κ,ω)-REELS software package. These optical properties for (ZrO2)0.66(HfO2)0.34 thin films are similar to that of ZrO2 dielectric thin films.

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