Band alignment and optical properties of (ZrO2)0.66(HfO2)0.34 gate dielectrics thin films on p-Si(100)
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- Shin Hye Chung
- Department of Physics, Chungbuk National University
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- Son Lee Seul
- Department of Physics, Chungbuk National University
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- Kim Kyeom Ryong
- Department of Physics, Chungbuk National University
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- Oh Suhk Kun
- Department of Physics, Chungbuk National University
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- Kang Hee Jae
- Department of Physics, Chungbuk National University
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- Tahir Dahlang
- Department of Physics, Hasanuddin University
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- Heo Sung
- Analytical Engineering Center, Samsung Advanced Institute of Technology
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- Chung Jae Gwan
- Analytical Engineering Center, Samsung Advanced Institute of Technology
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- Lee Jae Cheol
- Analytical Engineering Center, Samsung Advanced Institute of Technology
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- Tougaard Sven
- Department of Physics and Chemistry, University of Southern Denmark
書誌事項
- タイトル別名
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- Band alignment and optical properties of (ZrO<sub>2</sub>)<sub>0.66</sub>(HfO<sub>2</sub>)<sub>0.34</sub> gate dielectrics thin films on <i>p</i>-Si (100)
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抄録
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO2)0.66(HfO2)0.34 dielectric thin film grown on Si substrate were about 5.34, 2.35 and 1.87 eV, respectively. The band alignment is similar to that of ZrO2 thin film. In addition, The dielectric function ε(κ,ω), index of refraction n and the extinction coefficient k for the (ZrO2)0.66(HfO2)0.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε(κ,ω)-REELS software package. These optical properties for (ZrO2)0.66(HfO2)0.34 thin films are similar to that of ZrO2 dielectric thin films.
収録刊行物
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- Journal of Surface Analysis
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Journal of Surface Analysis 17 (3), 203-207, 2011
一般社団法人 表面分析研究会
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詳細情報 詳細情報について
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- CRID
- 1390001204471293696
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- NII論文ID
- 130005138940
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- NII書誌ID
- AA11448771
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- ISSN
- 13478400
- 13411756
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- NDL書誌ID
- 11077468
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可