Residual Hydrogen in Polycrystalline Silicon Produced from Monosilane by Fluidized-Bed CVD Method.
-
- Kojima Toshinori
- Dept. of Industrial Chemistry, Seikei University
-
- Odagiri Takashi
- Dept. of Industrial Chemistry, Seikei University
-
- Matsukata Masahiko
- Dept. of Industrial Chemistry, Seikei University
-
- Yamada Shigeru
- Dept. of Industrial Chemistry, Seikei University
Bibliographic Information
- Other Title
-
- 流動層CVD法によりモノシランから製造した多結晶シリコン粒子中の残留水素
- リュウドウソウ CVDホウ ニ ヨリ モノシラン カラ セイゾウシタ タケッシ
Search this article
Abstract
It has been pointed out that polycrystalline silicon particles produced from monosilane by the fluidized-bed CVD method contain residual hydrogen that causes disturbance of flow in a crucible in the CZ process. In the present work, the residual hydrogen was desorbed from produced Si particles by heat treatment. The activation energy for the hydrogen desorption was determined by the temperature-programmed desorption (TPD) technique. By FTIR, various types of Si-H bonds were found in the Si particles produced. The adsorbance area was decreased with increase in the desorbed hydrogen by TPD. From this relationship, the total amount of residual hydrogen was determined to be around 0.05% of the hydrogen contained in the reacted monosilane. The particle density of Si particles increased linearly almost up to the true density, with a decrease in the absorbance area of FTIR by the heat treatment.
Journal
-
- KAGAKU KOGAKU RONBUNSHU
-
KAGAKU KOGAKU RONBUNSHU 18 (5), 701-707, 1992
The Society of Chemical Engineers, Japan
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001204509460352
-
- NII Article ID
- 130000863275
-
- NII Book ID
- AN00037234
-
- ISSN
- 13499203
- 0386216X
-
- NDL BIB ID
- 3784129
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed