Study of Chemical Structure and Removal of Positive-Tone Novolak Resist Having Various Prebake Temperature using Wet Ozone

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  • Angata Yukihiro
    Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology
  • Goto Yousuke
    Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology
  • Takahashi Seiji
    Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology
  • Kono Akihiko
    Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology
  • Koike Kunihiko
    Iwatani Corporation
  • Nishiyama Itsuo
    Daipla Wintes Co., Ltd.
  • Kamoto Ritsu
    Micro Analysis Lab. Co., Ltd.
  • Horibe Hideo
    Research Laboratory for Integrated Technological Systems, Kanazawa Institute of Technology

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Other Title
  • プリベーク温度の異なるノボラック系ポジ型レジストの湿潤オゾンによる除去性と化学構造
  • プリベーク オンド ノ コトナル ノボラックケイ ポジガタ レジスト ノ シツジュン オゾン ニ ヨル ジョキョセイ ト カガク コウゾウ

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Abstract

The effect of prebake (PB) temperature on chemical structure and removal by wet ozone of the photo-active compound (PAC) positive-tone novolak resin/diazonaphthoquinone by use of FT-IR, micro-sampling mass spectrometry (μ-MS) and thermogravimetry analyzer (TGA). Resist films prebaked at between 100˚C and 200˚C were completely removable by wet ozone, but the resist removal rate decreased with increasing PB temperature and decreased significantly between 140˚C and 160˚C. The FT-IR spectrum revealed desorption of N2 from the PAC near the PB temperature of 160˚C. On the other hand, the novolak resin did not change with PB temperature. The μ-MS results confirmed that the decomposition temperature of the novolak resin and PAC did not change with changes in PB temperature. TGA curves indicated that the amount of the solvent remaining in the resist film was substantially desorbed at PB temperatures between 140˚C and 160˚C. From these results, we concluded that the chemical structure and thermal cross-linking of the resist are not affected by changes in the PB temperature. In contrast, the evaporation of residual solvents in the resist film increases with increasing PB temperature, resulting in shrinkage of the film. The decrease in resist removal rate of about 60% between 140˚C and 160˚C was therefore concluded to be due to the curing of the film.

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