MOCVD growth of ZnO thin films using Oxygen remote plasma
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- NAKAMURA Atsushi
- Graduate School of Electronic Science of Technology, Shizuoka University
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- SHIMIZU Yoshimi
- Research Institute of Electronics, Shizuoka University
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- AOKI Toru
- Research Institute of Electronics, Shizuoka University
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- TANAKA Akira
- Graduate School of Electronic Science of Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University
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- TEMMYO Jiro
- Graduate School of Electronic Science of Technology, Shizuoka University:Research Institute of Electronics, Shizuoka University
Bibliographic Information
- Other Title
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- 酸素リモートプラズマを用いたZnOのMOCVD成長(発光型・非発光型ディスプレイ合同研究会)
- 酸素リモートプラズマを用いたZnOのMOCVD成長
- サンソ リモートプラズマ オ モチイタ ZnO ノ MOCVD セイチョウ
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Abstract
ZnO has been grown by a remote plasma enhanced MOCVD technique using Oxygen plasma from Diethyl Zinc (DEZn). When hydrogen and nitrogen were used as carrier gas, the difference was looked at by the growth rate of ZnO film, and growth rate became large when a hydrogen carrier was used. Moreover, growth rate changed also with the rates of hydrogen gas flux and plasma oxygen flux. From the result which measured the plasma luminescence spectrum at the time of crystal growth, the growth mechanism by the interaction by oxygen plasma and hydrogen gas was proposed.
Journal
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- ITE Technical Report
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ITE Technical Report 27.4 (0), 65-68, 2003
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Details 詳細情報について
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- CRID
- 1390001204527888512
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- NII Article ID
- 10018990124
- 110003672181
- 110003268315
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- NII Book ID
- AA1123312X
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- ISSN
- 09135685
- 24241970
- 13426893
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- CiNii Articles
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- Abstract License Flag
- Disallowed