Facet-Selective Growth Rates of Doped Diamond Crystals Prepared by Microwave Plasma-Assisted Chemical Vapor Deposition.
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- Kusakabe Katsuki
- Department of Applied Chemistry, Kyushu University
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- Sobana Akira
- Department of Applied Chemistry, Kyushu University
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- Taniguchi Hirotomo
- Department of Applied Chemistry, Kyushu University
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- Sotowa Ken-Ichiro
- Department of Applied Chemistry, Kyushu University
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- Tsubota Toshiki
- Material Development Department, Kumamoto Industrial Research Institute
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In order to produce a highly oriented diamond layer on a silicon (100) substrate, reaction conditions should be controlled so as to achieve an initial selective growth on the (111) face, followed by the (100) face. In the present study, cubo-octahedral diamond crystals were formed by the microwave plasma-assisted chemical vapor deposition of methane and hydrogen on a silicon (100) wafer. Trimethylboron and dimethylsulfur as the boron or sulfur sources, respectively, were added to the gas phase and diamond was homoepitaxially deposited on the {100} and {111} of the crystals. The growth rate determined from geometrical changes in the crystals, was affected by the type of diamond faces used, the boron to carbon (B/C) and sulfur to carbon (S/C) ratios in the gas phase, the methane concentration, and the substrate temperature. The growth rate decreased with increasing B/C and S/C ratios, but the relative growth rate of [100] to [111] remained nearly independent of the dopant concentration. The [111] preferred growth was realized under lower methane concentrations and higher substrate temperatures.
収録刊行物
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- JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
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JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 35 (10), 996-1000, 2002
公益社団法人 化学工学会
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詳細情報 詳細情報について
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- CRID
- 1390001204566502528
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- NII論文ID
- 10010020271
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- NII書誌ID
- AA00709658
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- COI
- 1:CAS:528:DC%2BD38Xotlahtrw%3D
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- ISSN
- 18811299
- 00219592
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- NDL書誌ID
- 6336389
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可