Effect of substrate temperature on a-Si:H thin films fabricated by double tubed coaxial line type microwave plasma CVD.
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- Kato Isamu
- School of Science and Engineering, University of Waseda
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- Ueda Tetsuya
- School of Science and Engineering, University of Waseda
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- Hatanaka Kazuhisa
- School of Science and Engineering, University of Waseda
Bibliographic Information
- Other Title
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- 二重管式同軸線路マイクロ波プラズマＣＶＤ法によるａ‐Ｓｉ：Ｈ薄膜の基板温度特性
- ニジュウカンシキ ドウジク センロケイ マイクロハ プラズマ CVDホウ ニ
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Abstract
記事分類: 電気工学--電子工学--電子部品--固体素子
Journal
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- IEEJ Transactions on Fundamentals and Materials
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IEEJ Transactions on Fundamentals and Materials 106 (8), 391-397, 1986
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204592992000
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- NII Article ID
- 10006746565
- 130003425780
- 40002517135
- 10000013334
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- NII Book ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL BIB ID
- 3093357
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles