RFプラズマCVD法によるSiCN薄膜堆積の低温化に関する研究

熊懐 正彦, 吉野 正樹, 佐藤 孝紀, 伊藤 秀範

doi:10.1541/ieejfms.134.538

書誌事項

タイトル別名

Low-temperature Deposition of SiCN Thin Films by RF Plasma CVD Method
RF プラズマ CVDホウニヨル SiCN ハクマクタイセキノテイオンカニカンスルケンキュウ

この論文をさがす

説明

We deposited SiCN thin films by RF plasma CVD (Chemical Vapor Deposition) method using a mixture of Tetramethylsilane (TMS), nitrogen, and hydrogen gas. Deposited films were measured some properties with Fourier-Transform Infrared Spectroscopy (FT-IR), X-ray Photoelectron Spectroscopy (XPS), Ellipsometry and Atomic Force Microscope (AFM). We found that the temperature of substrate increased elimination and absorption reaction on the surface, and a fine film could be deposited at the temperature of 973K. To deposit SiCN with lower temperature, we changed H₂ flow rate. As results, we found that H₂ flow rate had great influence on the efficiency of decomposition of TMS. Moreover, the roughness of substrate was affected by the mixture rate of TMS. We could obtain the films nearly similar to the 973K ones at the state of 100Pa of pressure, 773K of substrate temperature, 80sccm of H₂ flow rate, and TMS mixture rate of 3% to 5%. In particular, 5% of TMS mixture rate could be considered as the best condition on this experiment.

収録刊行物

電気学会論文誌．　Ａ

電気学会論文誌．　Ａ 134 (10), 538-544, 2014

一般社団法人電気学会

キーワード

詳細情報詳細情報について

書き出し

問題の指摘