Preparation and Characterization of BaTiO<sub>3</sub> Thin Films by Backside Pulsed Ion-Beam Evaporation

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  • 背面堆積パルスイオンビーム蒸着法によるBaTiO<sub>3</sub>薄膜の生成と特性評価
  • 背面堆積パルスイオンビーム蒸着法によるBaTiO3薄膜の生成と特性評価
  • ハイメン タイセキ パルス イオン ビーム ジョウチャクホウ ニヨル BaTi

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Abstract

Barium titanate (BaTiO3) thin films have been prepared in situ on Al/SiO2/Si(100) substrate by backside deposition of intense, pulsed, ion-beam evaporation technique using 1.3MeV, 50ns, 25J/cm2 ion beam. Very smooth surface of the films was obtained, where no droplets appear, The deposition rate was approximately 50nm/shot, which is-10% of the conventional frontside deposition. The films were perovskite polycrystals. The maximum roughness of the surface decreases from 60 to 35nm with increasing substrate temperature from 25 to 350°C, respectively The capacitance of the thin film (at 1kHz) increases from 3 to 10nF/mm2 with increasing substrate temperature from 25 to 250°C, respectively.

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