書誌事項
- タイトル別名
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- Preparation and Characterization of BaTiO<sub>3</sub> Thin Films by Backside Pulsed Ion-Beam Evaporation
- 背面堆積パルスイオンビーム蒸着法によるBaTiO3薄膜の生成と特性評価
- ハイメン タイセキ パルス イオン ビーム ジョウチャクホウ ニヨル BaTi
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Barium titanate (BaTiO3) thin films have been prepared in situ on Al/SiO2/Si(100) substrate by backside deposition of intense, pulsed, ion-beam evaporation technique using 1.3MeV, 50ns, 25J/cm2 ion beam. Very smooth surface of the films was obtained, where no droplets appear, The deposition rate was approximately 50nm/shot, which is-10% of the conventional frontside deposition. The films were perovskite polycrystals. The maximum roughness of the surface decreases from 60 to 35nm with increasing substrate temperature from 25 to 350°C, respectively The capacitance of the thin film (at 1kHz) increases from 3 to 10nF/mm2 with increasing substrate temperature from 25 to 250°C, respectively.
収録刊行物
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- 電気学会論文誌. A
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電気学会論文誌. A 117 (4), 398-404, 1997
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204600608640
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- NII論文ID
- 130006840108
- 10002821720
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- NII書誌ID
- AN10136312
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- ISSN
- 13475533
- 03854205
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- NDL書誌ID
- 4171851
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- データソース種別
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- JaLC
- NDL
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