Low-Temperature Formation of Poly-Si<sub>1-x</sub>Ge<sub>x</sub> (0≤x≤1) Films by Ni-Induced Lateral Crystallization for Advanced TFT
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- Kanno Hiroshi
- Department of Electronics, Kyushu University
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- Kenjo Atsushi
- Department of Electronics, Kyushu University
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- Sadoh Taizoh
- Department of Electronics, Kyushu University
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- Miyao Masanobu
- Department of Electronics, Kyushu University
Bibliographic Information
- Other Title
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- Ni触媒誘起固相成長法を用いた次世代TFT用多結晶Si<sub>1-x</sub>Ge<sub>x</sub>(0≦x≦1)薄膜の低温形成
- Ni触媒誘起固相成長法を用いた次世代TFT用多結晶Si1-xGex(0≦x≦1)薄膜の低温形成
- Ni ショクバイ ユウキ コソウ セイチョウホウ オ モチイタ ジ セダイ TFTヨウ タケッショウ Si1 xGex 0 x 1 ハクマク ノ テイオン ケイセイ
- Low-Temperature Formation of Poly-Si<sub>1-x</sub>Ge<sub>x</sub> (0≤x≤1) Films by Ni-Induced Lateral Crystallization for Advanced TFT
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Description
Development of new semiconductors with high carrier mobility is strongly needed to realize future system-in-displays. To achieve this, we have been investigating low-temperature crystallization of a-Si1-xGex (0≤x≤1) on insulating films. Present paper focuses our recent progress of the Ni-induced lateral crystallization of a-Si1-xGex (0≤x≤1). Effects of the Ge fraction and the electric field on the growth characteristics are discussed.
Journal
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- IEEJ Transactions on Electronics, Information and Systems
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IEEJ Transactions on Electronics, Information and Systems 126 (9), 1073-1078, 2006
The Institute of Electrical Engineers of Japan
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Details 詳細情報について
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- CRID
- 1390001204604017664
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- NII Article ID
- 10019289932
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- NII Book ID
- AN10065950
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- ISSN
- 13488155
- 03854221
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- NDL BIB ID
- 8079898
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed