Current Status of Thin-film Synthesis and Junction Fabrication of MgB<sub>2</sub> and Future Prospects for Device Application

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  • NAITO Michio
    Department of Applied Physics, Tokyo University of Agriculuture and Technology

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  • MgB<sub>2</sub>薄膜・接合作製の現状とデバイス応用への展望
  • MgB2薄膜・接合作製の現状とデバイス応用への展望
  • MgB2 ハクマク セツゴウ サクセイ ノ ゲンジョウ ト デバイス オウヨウ エ ノ テンボウ

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Abstract

This article reviews the developments over the past six years in the thin-film growth and junction fabrication of superconducting MgB2 materials, including future prospects for MgB2 superconducting electronics. The most serious problem in the thin-film growth of MgB2 is the high Mg vapor pressure required for phase stability. This problem has made in-situ film growth difficult. At present, however, high-quality in-situ films can be prepared either by a low-temperature route or a high-temperature route. Current best films substantially exceed bulk single crystals in size and quality. The technology to fabricate MgB2 junctions has also shown great progress, and now all-MgB2 SIS Josephson junctions are realized, which demonstrates a great potential for MgB2 in superconducting electronics.

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