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- SUZAKI Yoshifumi
- 正会員 高松工業高等専門学校 高機能化技術教育研究センター
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- SHIKAMA Tomokazu
- 高松工業高等専門学校 高機能化技術教育研究センター
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- KAKIUCHI Hiroaki
- 正会員 大阪大学工学部
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- YOSHII Kumayasu
- 正会員 大阪大学工学部
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- KAWABE Hideaki
- 正会員 大阪大学工学部
Bibliographic Information
- Other Title
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- スパッタ法により作製したa‐Si(:H)/a‐SiC(:H)超格子薄膜の量子井戸効果
- スパッタホウ ニ ヨリ サクセイシタ a Si H a SiC H チョウコウ
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Abstract
Quantum size effects of amorphous silicon/amorphous silicon carbide (a-Si(:H)/a-SiC(:H)) multilayer films prepared by a dual rf magnetron sputtering method are investigated by measurements of Vacuum Ultraviolet Photoelectron Spectroscopy (UPS) and optical absorption. Valence band offsets of a-Si/a-SiC and a-Si:H/a-SiC:H heterojunctions are 0.3 and 0.05 eV, respectively. Optical gaps of a-Si, a-SiC, a-Si:H and a-SiC:H are 1.22, 1.52, 1.87 and 2.20 eV, respectively. In a-Si:H/aSiC:H multilayer film the quantum well layer thickness dependence of the optical gap is found to be in good agreement with a 1-dimensional quantum well model. It is obtained that the effective mass of electron in a-Si:H film is 0.15 mo (mo; the mass of free electron). In a-Si/a-SiC multilayer film quantum size effect does not appear. It can be considered that the effective mass of hole in a-Si film is more than hundred times as large as that of free electron.
Journal
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- Journal of the Japan Society for Precision Engineering
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Journal of the Japan Society for Precision Engineering 60 (3), 393-396, 1994
The Japan Society for Precision Engineering
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Keywords
Details 詳細情報について
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- CRID
- 1390001204764838784
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- NII Article ID
- 110001371597
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- NII Book ID
- AN1003250X
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- ISSN
- 1882675X
- 09120289
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- NDL BIB ID
- 3864142
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed