Change in Edge Surface Flatness of Silicon Wafer during Polishing

DOI 1 Citations Open Access

Bibliographic Information

Other Title
  • シリコンウェーハ研磨加工におけるウェーハエッジ部の表面形状創成過程
  • Change in edge surface flatness of silicon wafer during polishing – effect of polishing pad deformation on edge roll off –
  • —Effect of Polishing Pad Deformation on Edge Roll Off—
  • —研磨パッド変形量がエッジ・ロールオフ生成に及ぼす影響—

Abstract

Design specifications of semiconductor devices are constantly being miniaturized for increasing the integration density of the devices, which requires highly flat surfaces of silicon wafers as the starting materials of the devices. However, surface flatness significantly deteriorates near the wafer edge because of edge roll off during polishing as the final stage of the wafer manufacturing process. To address this problem, various polishing methods such as the use of polishing pads with small deformation property have been conducted and, however, cannot meet the recent demand for diminishing edge roll off in small stock removal of 10μm or less. In this study, the influence of polishing pad property such as deformation property on obtained edge surface flatness was experimentally investigated in various stock removal, and the influence on the stress distribution near the wafer edge was investigated using finite element methods. Based on the results, thin polishing pads with large deformation property were developed. Polishing experiments on silicon wafers showed that the developed polishing pads achieved high surface flatness near the edge in the overall progress of polishing including small stock removal as compared to commercial pads.

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Details 詳細情報について

  • CRID
    1390001204829215488
  • NII Article ID
    130004679120
  • DOI
    10.2493/jjspe.80.777
  • ISSN
    1882675X
    09120289
  • Text Lang
    ja
  • Data Source
    • JaLC
    • Crossref
    • CiNii Articles
    • KAKEN
  • Abstract License Flag
    Disallowed

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