MnSbグラニュラー構造における室温超巨大磁気抵抗効果
書誌事項
- タイトル別名
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- Room-Temperature Extra-huge Magnetoresistance Effect in MnSb Granular Films.
- MnSb グラニュラー コウゾウ ニ オケル シツオン チョウキョダイ ジキ テイコウ コウカ
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抄録
A huge positive magnetoresistance effect in a relatively low magnetic field (less than 0.5 T) at room temperature was discovered in MnSb granular films. A granular film consisting of nano-scale MnSb clusters was grown on a sulfur-passivated GaAs(001) substrate by molecular beam epitaxy, then covered with an Sb thin layer. The granular film shows magnetic-field-sensitive current-voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, a more than 1000 percent change in the current, which we term a magnetoresistive switch, is driven by the magnetoresistance effect. A possible mechanism for the magnetoresistive switch effect is discussed.
収録刊行物
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- 日本応用磁気学会誌
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日本応用磁気学会誌 24 (4-2), 451-454, 2000
公益社団法人 日本磁気学会
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詳細情報 詳細情報について
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- CRID
- 1390001205091046656
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- NII論文ID
- 110002810706
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- NII書誌ID
- AN0031390X
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- ISSN
- 18804004
- 02850192
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- NDL書誌ID
- 5349119
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- NDL-Digital
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可