Floating Millivolt Reference for PTAT Current Generation in Subthreshold MOS LSIs
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- Ueno Ken
- Department of Electrical Engineering, Hokkaido University
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- Hirose Tetsuya
- Department of Electrical and Electronics Engineering, Kobe University
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- Asai Tetsuya
- Department of Electrical Engineering, Hokkaido University
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- Amemiya Yoshihito
- Department of Electrical Engineering, Hokkaido University
Bibliographic Information
- Other Title
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- サブスレッショルドＭＯＳＦＥＴを用いたＰＴＡＴ電流生成のための微小フローティング電圧源回路
- サブスレッショルド MOSFET オ モチイタ PTAT デンリュウ セイセイ ノ タメ ノ ビショウ フローティング デンアツ ゲン カイロ
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Abstract
A floating millivolt reference circuit to generate a PTAT current was developed by using MOSFETs operated in the subthreshold region. The circuit generates a floating voltage of 10 mV. The variations in the reference are ±2.7 % in a temperature range from -20 to 100°C. The total power consumption of the circuit was 1.3 μW.
Journal
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- The Journal of The Institute of Image Information and Television Engineers
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The Journal of The Institute of Image Information and Television Engineers 63 (12), 1877-1880, 2009
The Institute of Image Information and Television Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390001205096912000
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- NII Article ID
- 10025988046
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- NII Book ID
- AN10588970
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- ISSN
- 18816908
- 13426907
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- NDL BIB ID
- 10509634
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed