Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing
-
- Ng Jin-Aun
- Frontier Collaborative Research Center
-
- Sugii Nobuyuki
- Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology
-
- Kakushima Kuniyuki
- Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology
-
- Ahmet Parhat
- Frontier Collaborative Research Center
-
- Tsutsui Kazuo
- Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology
-
- Hattori Takeo
- Frontier Collaborative Research Center
-
- Iwai Hiroshi
- Frontier Collaborative Research Center
Description
In this paper, we reported the effective mobility and the interface-state density of La2O3 nMISFETs fabricated under different post deposition annealing (PDA) conditions; annealing temperature (300°C - 600°C) and ambient (N2 or O2). High effective mobility of 312cm2/Vs and low interface-state density of 6 × 1010cm-2/eV were obtained from La2O3 nMISFET with equivalent oxide thickness (EOT) of 1.7nm after PDA at 300°C in N2 ambient for 10 minutes. Gate leakage current density was 6.8 × 10-6A/cm2. We found that peak effective mobility decreased with increasing anneal temperature, regardless of annealing ambient. We also observed a monotonous relationship between effective mobility and interface-state density. This behavior suggests that lowering the interface-state density is essential to obtain high mobility in the high-κ/Si structure.
Journal
-
- IEICE Electronics Express
-
IEICE Electronics Express 3 (13), 316-321, 2006
The Institute of Electronics, Information and Communication Engineers
- Tweet
Details 詳細情報について
-
- CRID
- 1390001205212673408
-
- NII Article ID
- 130000088263
-
- ISSN
- 13492543
-
- Text Lang
- en
-
- Data Source
-
- JaLC
- Crossref
- CiNii Articles
- OpenAIRE
-
- Abstract License Flag
- Disallowed
