書誌事項
- タイトル別名
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- Crystallization of Amorphous (Pb, La)(Zr, Ti)O3 Thin Film and Its Electrical Properties.
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抄録
Dense amorphous PLZT films with composition (Pb0.925La0.075) (Zr0.4Ti0.6)O3 were deposited on Pt/MgO (100) substrates by rf-magnetron sputtering without heating the substrates and were subsequently crystallized by postdeposition annealing. The optimum conditions in the two-step annealing process to crystallize the amorphous PLZT films were investigated. The post-deposition-annealed films showed excellent crystallinity and c-axis orientation when the amorphous PLZT films were annealed in an oxygen flow at a soaking temperature for the initial nucleation process of T1=300°C, a temperature for crystal growth process of T2=750°C, and the T2-soaking time of t2=60min. Conventional Pt/PLZT/Pt capacitors were fabricated by forming Pt top electrodes on crystallized 300-nm-thick PLZT films. The remanent polarization and the coercive field of the present capacitors, which indicated almost symmetric P-E hysteresis loops, were 2Pr≅30μC/cm2 and 2Ec≅90kV/cm, respectively. The high-endurance PLZT capacitors with excellent ferroelectric properties produced by the present optimized crystallization have great potential for application to nonvolatile memory devices.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 109 (1271), 631-636, 2001
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205247584512
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- NII論文ID
- 110002288881
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- NII書誌ID
- AN10040326
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- COI
- 1:CAS:528:DC%2BD3MXmtF2hsrY%3D
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 5831603
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- 抄録ライセンスフラグ
- 使用不可