書誌事項
- タイトル別名
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- Preparation of GaN Crystals by a Reaction of Ga2O3 with Li3N
- チッカ リチウム ト サンカ ガリウム ト ノ ハンノウ ニ ヨル GaN ケッショウ ノ サクセイ
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説明
A novel synthetic route to preparation of GaN particles from Ga2O3 and Li3N under milder condition than other conventional methods has been explored. We have found that a reaction of Ga2O3 and Li3N at temperatures ranging from 500°C and 700°C in nitrogen atmosphere of 0.4 MPa yields a mixture of GaN and Li2O powder, from which Li2O is subsequently removed by dissolving the reaction products in water. The GaN single crystals prepared by this method were hexagonal wurtzite type, no cubic phase was found. The crystal sizes were about 1 μm. This technique seems to have applicability also for the synthesis of other nitride particles.<br>
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 113 (1316), 291-296, 2005
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205248657280
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- NII論文ID
- 110002292297
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 7301380
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDLサーチ
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可