水熱合成法によるBa(Ti<sub>1-<i>x</i></sub>Zr<sub><i>x</i></sub>)O<sub>3</sub>薄膜の作製と電気特性
書誌事項
- タイトル別名
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- Preparation and Electrical Properties of Ba(Ti1-xZrx)O3 Thin Films by Hydrothermal Method.
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Ba(Ti1-xZrx)O3 thin films have been synthesized on the titanium substrates at 160°C by hydrothermal method. The surface roughness (Ra) of the film was 0.096μm. The molar ratio of Zr/Ti of the film analyzed by EDS was 0.25/0.75. The film microstructure depended strongly on both starting materials and KOH concentration. The grain size became larger from approximately 0.6 to 1μm with increasing KOH concentration from 1×10-3 to 3.5×10-3mol·m-3 at am aqueous solution of 7.8×10-5mol·m-3. The Ba(Ti0.75Zr0.25)O3 thin film synthesized in an aqueous solution of 7.8×10-5mol·m-3 containing 3.5×10-3mol·m-3 KOH showed a dielectric constant of about 426 and dielectric loss of about 0.077 at 1kHz. The transition point between the ferroelectric and paraelectric phases of the film heat-treated at 300°C for 0.5h was approximately 10°C.
収録刊行物
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- Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
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Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌) 110 (1282), 530-534, 2002
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205249952128
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- NII論文ID
- 110002291645
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- NII書誌ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL書誌ID
- 6178123
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
