Preparation and Properties of Piezoelectric Lead Zirconate Titanate Thin Films for Microsensors and Microactuators by Sol-Gel Processing

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  • TUCHIYA Toshiyuki
    Research Center for Advanced Science and Technology, The University of Tokyo Toyota Central R & D Laboratories Inc.
  • ITOH Toshihiro
    Research Center for Advanced Science and Technology, The University of Tokyo
  • SASAKI Gen
    Research Center for Advanced Science and Technology, The University of Tokyo Faculty of Engineering, Hiroshima University
  • SUGA Tadatomo
    Research Center for Advanced Science and Technology, The University of Tokyo

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  • ゾル-ゲル法によるマイクロセンサー, マイクロアクチュエーター用圧電体チタン酸ジルコン酸鉛セラミックス薄膜の作製とその特性
  • Preparation and Properties of Piezoelec

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Abstract

PZT thin films for microsensors and microactuators were prepared from lead acetate and zirconium, titanium alkoxide solution by sol-gel processing. High-performance, crack-free, thin (3.1μm) films were acquired by multiple coating, and high-temperture annealing.<br>PbO evaporation occurred on firing. This is caused by the lack of Pb and the structure is divided into a perovskite phase and the amorphous and/or nanocrystal regions. The existence of the amorphous and/or nanocrystal region reduces the dielectric and piezoelectric constants. Excess Pb diminishes the amorphous and/or nanocrystal region and improves the piezoelectric and ferroelectric properties.<br>A 20mol% Pb excess PZT film has good piezoelectric properties. The dielectric constant εr, the piezoelectric constant d31 and the spontaneous polarization Ps are 1800, 30.0×10-2C/m2 and 39.2×10-12C/N, respectively. These values are similar to those of bulk PZT ceramics. This PZT film will be used in the fabrication of microactuators and microsensors.

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