Degradation Behavior of PTCR BaTiO<sub>3</sub> in Reducing Gases
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- ER Gang
- Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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- TAKEUCHI Nobuyuki
- Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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- ISHIDA Shingo
- Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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- HOSOKAWA Kazuyoshi
- Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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- YAMAZAKI Kenji
- Department of Chemistry and Materials Technology, Kyoto Institute of Technology
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- KITOH Norimitsu
- Yokaichi Plant, Murata Mfg. Co., Ltd.
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- NAMIKAWA Yasunori
- Yokaichi Plant, Murata Mfg. Co., Ltd.
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- NIIMI Hideaki
- Yokaichi Plant, Murata Mfg. Co., Ltd.
Bibliographic Information
- Other Title
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- 還元性ガスによるPTCR BaTiO<sub>3</sub>の劣化挙動
- Degradation Behavior of PTCR BaTiO3 in
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Abstract
Degradation of positive temperature coefficient of resistivity (PTCR) properties of semiconducting BaTiO3 ceramics that were annealed in reducing gases was studied from a mechanistic viewpoint mainly by measuring the electrical and dielectric properties, using reflectance and ESR spectroscopies, as well as by gas analysis using a quadrupole mass spectrometer. The results showed that after annealing, the density of the surface acceptor states decreased whereas the concentration of conduction electrons increased. The degradation in PTCR, properties was assumed to be caused by the diffusion of hydrogen atoms that were formed from reducing gases along the grain boundaries. These atoms reacted with chemisorbed oxygen ions, releasing trapped electrons and lowering the barrier potential.
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 104 (1216), 1091-1096, 1996
The Ceramic Society of Japan
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Details 詳細情報について
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- CRID
- 1390001205278948864
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- NII Article ID
- 110002291408
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- NII Book ID
- AN10040326
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- ISSN
- 18821022
- 09145400
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- NDL BIB ID
- 4087579
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed