Electrical properties of Al2O3/La2O3/Al2O3 films using various tunnel oxide thicknesses for non-volatile memory device applications
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- KIM Hyo June
- Department of Ceramic Engineering, Yonsei University
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- CHA Seung Yong
- Department of Ceramic Engineering, Yonsei University
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- CHOI Doo Jin
- Department of Ceramic Engineering, Yonsei University
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The electrical properties (including memory windows and leakage current densities) of Al2O3/La2O3/Al2O3 (ALA) films equipped with 5 nm, 7.5 nm, and 10 nm tunnel oxide layer were investigated. The dielectric constants of all of the tunnel oxide films using Al2O3 were the same and the equivalent oxide thickness was dependent on film thickness. The optimized conditions were exhibited in the ALA films with a 5 nm tunnel oxide. The memory window of the ALA films using the 5 nm tunnel oxide was about 1.31 V in the program condition (11 V for 10 ms) and in the erase condition (-13 V for 100 ms). Measurement of the leakage current density showed that all of the films are sufficient for use with flash memory device.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 117 (1365), 555-557, 2009
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205283498624
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- NII論文ID
- 10025967438
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- NII書誌ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL書誌ID
- 10214863
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可