Deposition of α-Al2O3 films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser

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  • YOU Yu
    Institute for Materials Research, Tohoku University
  • ITO Akihiko
    Institute for Materials Research, Tohoku University
  • TU Rong
    Institute for Materials Research, Tohoku University
  • GOTO Takashi
    Institute for Materials Research, Tohoku University

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タイトル別名
  • Deposition of .ALPHA.-Al2O3 films on Ti(C, N)-based cermet substrate by laser chemical vapor deposition using a diode laser
  • Deposition of a Al2O3 films on Ti C N based cermet substrate by laser chemical vapor deposition using a diode laser

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抄録

α-Al2O3 film was first deposited on Ti(C, N)-based cermet substrate by laser chemical vapor deposition (LCVD) in a CO2–H2 atmosphere. The effects of atmosphere, laser power (PL), total pressure (Ptot) and deposition temperature (Tdep) on the crystal phase and microstructure were investigated. α- and γ-phase mixture film was prepared at Tdep = 833 K. Single phase α-Al2O3 film was obtained at Tdep = 903 K. The surface morphology of α-Al2O3 film changed from a cauliflower-like to a granular-like structure with increasing Tdep and decreasing Ptot. α-Al2O3 film with a well-developed facet structure was obtained at Ptot = 0.6 kPa and Tdep = 933 K.

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