Heterointerfaces: atomic structures, electronic states, and related properties
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- WANG Zhongchang
- World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
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- SAITO Mitsuhiro
- World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
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- TSUKIMOTO Susumu
- World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
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- IKUHARA Yuichi
- Institute of Engineering Innovation, The University of Tokyo Nanostructures Research Laboratory, Japan Fine Ceramics Center
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Abstract
Recent breakthroughs in transmission electron microscopy enable a direct quantitative determination of the technologically significant heterointerfaces, yet a direct interpretation is not always possible. Here, we review the general processes to introduce the high-precision first-principles calculations into the microscopy in order to obtain an atomistic understanding of effects of buried interfaces on a wide range of properties. We demonstrate the possibility and important advance of this combined method in relating interface structures to device physics even for the complex heterointerfaces, SiC/Ti3SiC2, LaxSr1−xO/(SrTiO3)n, and Pd/ZnO presented here. We therefore believe that this approach should be widely applicable to many other interfaces and a range of materials, providing new insights into many long-standing unresolved issues regarding interfaces.
Journal
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 119 (1395), 783-793, 2011
The Ceramic Society of Japan
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Details 詳細情報について
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- CRID
- 1390001205287269248
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- NII Article ID
- 130001310502
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- NII Book ID
- AA12229489
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- ISSN
- 13486535
- 18820743
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- NDL BIB ID
- 11290984
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed