Heterointerfaces: atomic structures, electronic states, and related properties
-
- WANG Zhongchang
- World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
-
- SAITO Mitsuhiro
- World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
-
- TSUKIMOTO Susumu
- World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
-
- IKUHARA Yuichi
- Institute of Engineering Innovation, The University of Tokyo Nanostructures Research Laboratory, Japan Fine Ceramics Center
この論文をさがす
抄録
Recent breakthroughs in transmission electron microscopy enable a direct quantitative determination of the technologically significant heterointerfaces, yet a direct interpretation is not always possible. Here, we review the general processes to introduce the high-precision first-principles calculations into the microscopy in order to obtain an atomistic understanding of effects of buried interfaces on a wide range of properties. We demonstrate the possibility and important advance of this combined method in relating interface structures to device physics even for the complex heterointerfaces, SiC/Ti3SiC2, LaxSr1−xO/(SrTiO3)n, and Pd/ZnO presented here. We therefore believe that this approach should be widely applicable to many other interfaces and a range of materials, providing new insights into many long-standing unresolved issues regarding interfaces.
収録刊行物
-
- Journal of the Ceramic Society of Japan
-
Journal of the Ceramic Society of Japan 119 (1395), 783-793, 2011
公益社団法人 日本セラミックス協会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001205287269248
-
- NII論文ID
- 130001310502
-
- NII書誌ID
- AA12229489
-
- ISSN
- 13486535
- 18820743
-
- NDL書誌ID
- 11290984
-
- 本文言語コード
- en
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
-
- 抄録ライセンスフラグ
- 使用不可