書誌事項
- タイトル別名
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- Atomic Level Thickness Uniformity and Reliability of Ultrathin Silicon Dioxide Films Thermally Grown on Crystalline Silicon
- ゴクウス シリコン サンカマク ニ オケル ゲンシ レベル ノ マクアツ キンイツセイ ト シンライセイ
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説明
In this paper, the evaluation methods of the degradation and dielectric breakdown of ultrathin SiO2 thermally grown on Si, which are one of most superior dielectric films, are introduced along with some examples. SISuR (Stress-Induced oxide Surface Roughness) method with using a reaction between SiO2 films with trapped charges and etching solution is available to clarify that the degradation in SiO2 film under high electric field stress is not uniform. Furthermore, it is indicated that thermal oxidation of the atomically-flat Si terrace surface does not progress two-dimensionally uniformly, strictly speaking. The non-uniform oxidation is one of the origins of the wide lifetime distribution of dielectric breakdown of the ultrathin SiO2 films.<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 58 (1), 27-34, 2015
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205294170368
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- NII論文ID
- 130004952534
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 026027154
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- 本文言語コード
- ja
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- 資料種別
- journal article
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- データソース種別
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- JaLC
- NDLサーチ
- Crossref
- CiNii Articles
- KAKEN
- OpenAIRE
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- 抄録ライセンスフラグ
- 使用不可
