書誌事項
- タイトル別名
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- The Effect of a Buffer Layer on the Electric Properties of InSb Thin Films Grown by Metalorganic Vapor Phase Epitaxy
- ユウキ キンゾク キソウ セイチョウホウ InSb ハクマク ノ デンキテキ トクセイ ニ アタエル バッファソウ ノ エイキョウ
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We have studied the thermoelectric properties of InSb thin films. They were prepared by metalorganic vapor phase epitaxy on sapphire substrate using sputtered InAs buffer layer. Substrate temperature during the deposition of InAs buffer layer was changed between 65°C and 250°C. Electrical properties, thermoelectric properties, and crystalline properties of InSb thin films with a InAs buffer were assessed using Hall measurement, Power factor and X-ray diffraction. The power factor of InSb was as high as 2.1×10−4 W/mK2 at a deposition temperature of 150°C of InAs.<br>
収録刊行物
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- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
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Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 54 (3), 166-168, 2011
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205294732672
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- NII論文ID
- 10028057021
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- NII書誌ID
- AA12298652
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- ISSN
- 18824749
- 18822398
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- NDL書誌ID
- 11108596
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可