書誌事項
- タイトル別名
-
- Growth of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3, and Their Electrical Properties
- Pr EtCp 3 オ モチイタ ゲンシソウ セイチョウホウ ニ ヨル Pr サンカ マク ノ サクセイ ト ソノ デンキテキ トクセイ
この論文をさがす
抄録
Growth properties and electrical properties of Pr oxide films by an atomic layer deposition (ALD) technique using Pr(EtCp)3 are discussed in this paper. Slef-limiting growth of Pr oxide films at a rate of 0.07 nm/cycle and a thickness variation of less than 2% on 3-in. Si wafers were obtained. Polycrystalline cubic Pr2O3 films were grown on Si(001) substrates, while epitaxial growth of the cubic Pr2O3 film was found on a Si(111) substrate. Relatively fine capacitance-voltage curves were obtained for the Al/ALD-Pr oxide/Si(001) capacitors. The interface state density between the 130°C-grown ALD-Pr oxide film and the Si(001) substrate is about 1×1011 cm−2 eV−1. The dielectric constant of the ALD-Pr oxide film grown at 250°C was determined to be about 18, assuming that the dielectric constant of the interlayer is similar to that of SiO2.<br>
収録刊行物
-
- Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ
-
Ｊｏｕｒｎａｌ ｏｆ ｔｈｅ Ｖａｃｕｕｍ Ｓｏｃｉｅｔｙ ｏｆ Ｊａｐａｎ 54 (2), 110-113, 2011
一般社団法人 日本真空学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001205295758976
-
- NII論文ID
- 10027869984
-
- NII書誌ID
- AA12298652
-
- ISSN
- 18824749
- 18822398
-
- NDL書誌ID
- 11029582
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可