書誌事項
- タイトル別名
-
- Silicon Trench Etching by Electron Cyclotron Resonance Plasma
- Electron Cyclotron Resonance Plasma オ モチイタ シリコン フカボリ ギジュツ
この論文をさがす
抄録
Hitachi High-Technologies released a new dry plasma etcher designated as the Hitachi M-6180 and targeted for deep silicon trench etch. The new Hitachi M-6180 deep trench etcher provides for excellent uniformity, superior trench profiles, and high selectivity. The Hitachi M-6180 is based on an ECR (Electron Cyclotron Resonance) plasma source able to generate a high density (1×1011 cm-3) plasma at 0.01 Pa. The low temperature and low pressure reactions of the Hitachi M-6180 achieve superior trench profiles with no sidewall residue. The clean nature of the Hitachi M-6180 ECR etch chamber allows for Mean Time Between Wet Cleaning (MTBW) that is extremely long and particle levels that are very low.<br>
収録刊行物
-
- Journal of the Vacuum Society of Japan
-
Journal of the Vacuum Society of Japan 53 (7), 435-440, 2010
一般社団法人 日本真空学会
- Tweet
詳細情報 詳細情報について
-
- CRID
- 1390001205295768960
-
- NII論文ID
- 10026525748
-
- NII書誌ID
- AA12298652
-
- ISSN
- 18824749
- 18822398
-
- NDL書誌ID
- 10785929
-
- 本文言語コード
- ja
-
- データソース種別
-
- JaLC
- NDL
- Crossref
- CiNii Articles
-
- 抄録ライセンスフラグ
- 使用不可