Cu wire bonding for power devices

DOI
  • Zhou Yu
    Waseda University, Graduate School of Information, Production and Systems
  • tatsumi kohei
    Waseda University, Graduate School of Information, Production and Systems

Bibliographic Information

Other Title
  • パワーデバイス用銅ワイヤボンディング

Description

Ultrasonic wedge bonding with large-diameter of copper wires was investigated for power device interconnections. Wedge portions were bonded to aluminum pads on silicon dies. The copper wire bonding may cause chip damages resulting from hardened copper wire including underpad and silicon cratering. These bonding damages could be eliminated by raising the bonding temperature and optimizing bonding conditions such as pressure, ultrasonic power, and touching speed. The interconnection reliability will be discussed by observing the cross sections of bonds.

Journal

Keywords

Details 詳細情報について

  • CRID
    1390001205556480128
  • NII Article ID
    130005469923
  • DOI
    10.11486/ejisso.26.0_367
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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