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Development of the polishing process technology of the crystal substrate for green devices (The 7<sup>th</sup> Report)
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- Ohtsubo Masanori
- KYUSHU University KASTEC
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- Seshimo Kiyoshi
- KYUSHU University KASTEC
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- Yamazaki Tsutomu
- KYUSHU University KASTEC
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- Nishizawa Hideaki
- KYUSHU University KASTEC
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- Murakami Sachi
- KYUSHU University KASTEC
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- Miyashita Tadakazu
- Fujikoshi Machinery Corp.
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- Takagi Masataka
- Fujibo Ehime Corp.
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- Doi Toshiro
- KYUSHU University KASTEC
Bibliographic Information
- Other Title
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- グリーンデバイス用結晶基板の加工プロセス技術の研究開発(第7報)
- ダイラタンシー・パッド<sup>TM</sup>を用いたSiC基板の高速圧加工に関する研究
- Study on high rotational speed/ pressure polishing of SiC substrate using with the dilatancy pad<sup>TM</sup>
Description
Wide-gap semiconductor material substrates (i.e. SiC and GaN), which have been attracted attention as a future high-performance and multi-functions semiconductor, are being developed as a part of the high-efficiency and high-quality polishing process development. In this paper, I describe the research and development of the polishing process using the originally developed high rigidity high rotational speed/ pressure polishing equipment and the innovative special dilatancy pad in which is aiming to achieve for both a high efficiency and high quality polishing.
Journal
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- Proceedings of JSPE Semestrial Meeting
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Proceedings of JSPE Semestrial Meeting 2015S (0), 535-536, 2015
The Japan Society for Precision Engineering
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Details 詳細情報について
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- CRID
- 1390001205657578752
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- NII Article ID
- 130005486319
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- Text Lang
- ja
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- Data Source
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- JaLC
- CiNii Articles
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- Abstract License Flag
- Disallowed