Development of the polishing process technology of the crystal substrate for green devices (The 7<sup>th</sup> Report)

DOI

Bibliographic Information

Other Title
  • グリーンデバイス用結晶基板の加工プロセス技術の研究開発（第7報）
  • ダイラタンシー・パッド<sup>TM</sup>を用いたSiC基板の高速圧加工に関する研究
  • Study on high rotational speed/ pressure polishing of SiC substrate using with the dilatancy pad<sup>TM</sup>

Description

Wide-gap semiconductor material substrates (i.e. SiC and GaN), which have been attracted attention as a future high-performance and multi-functions semiconductor, are being developed as a part of the high-efficiency and high-quality polishing process development. In this paper, I describe the research and development of the polishing process using the originally developed high rigidity high rotational speed/ pressure polishing equipment and the innovative special dilatancy pad in which is aiming to achieve for both a high efficiency and high quality polishing.

Journal

Keywords

Details 詳細情報について

  • CRID
    1390001205657578752
  • NII Article ID
    130005486319
  • DOI
    10.11522/pscjspe.2015s.0_535
  • Text Lang
    ja
  • Data Source
    • JaLC
    • CiNii Articles
  • Abstract License Flag
    Disallowed

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