マルチ電極システムによるゲート絶縁薄膜の非破壊評価

DOI

書誌事項

タイトル別名
  • Multiple-electrode system for non-destructive evaluation of ultra-thin oxide

抄録

In previous study, we developed a technique to evaluate the electrical conductivity of the whole gate insulator of a 12-inch Si wafer using a non-destructive and non-contact pulse photo-conductivity method. But, the time duration of measuring just 170 points on the specimen was very long due to one single probe in our system and a slow move of the stage. We have, then, developed a multiple-electrode system with 100 electrodes and multiple-flash lamp for a faster evaluation. This system is necessary for mass production of semiconductor devices.

収録刊行物

詳細情報 詳細情報について

  • CRID
    1390001205664421248
  • NII論文ID
    130005487319
  • DOI
    10.11527/jceeek.2013.0_178
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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