-
- MIYASHITA Tadakazu
- Fujikoshi Machinery Corp.
-
- SESHIMO Kiyoshi
- 九州大学 産学連携センター 連携部門
-
- YAMAZAKI Tsutomu
- 九州大学 産学連携センター 連携部門
-
- KAJIKURA Atsushi
- Fujikoshi Machinery Corp.
-
- ICHIKAWA Daizo
- Fujikoshi Machinery Corp.
-
- DOI Toshiro
- 九州大学 産学連携センター 連携部門
Bibliographic Information
- Other Title
-
- 高速高圧研磨プロセス用研磨装置の開発
- -サファイヤならびに SiC 基板への適用とその加工特性-
- -Application and polishing characteristics of the Sapphire and SiC substrates -
Abstract
<p>Compound semiconductors used in power devices and optical devices such as LED .Among them materials ,SiC and GaN ,Sapphire are known as hard- to-processes materials .we have developed a high-speed and high-pressure polishing machine for aiming at high efficiency polishing of the hard-to-process materials .In this machine ,the rotation speed of table and work are 1000min-1 ,polishing pressure can be added up to 1000kPa ,it is designed to reduce vibration during high speed ,with a high rigidity .As a result of the evolution of the high-speed high-pressure polishing process ,it is possible to achieve a high efficiency .</p>
Journal
-
- The Proceedings of Mechanical Engineering Congress, Japan
-
The Proceedings of Mechanical Engineering Congress, Japan 2016 (0), S1630102-, 2016
The Japan Society of Mechanical Engineers
- Tweet
Keywords
Details 詳細情報について
-
- CRID
- 1390001205841109248
-
- NII Article ID
- 130007069138
-
- ISSN
- 24242667
-
- Text Lang
- ja
-
- Data Source
-
- JaLC
- Crossref
- CiNii Articles
-
- Abstract License Flag
- Disallowed