書誌事項
- タイトル別名
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- Development of a Residual Stress Monitoring Sensor for Electronic Devices
抄録
<p>Recently, it has been also found that the amplitude and distribution of the residual stress vary drastically depending on the size of the element component and their manufacturing process. A fluctuation of the residual stress should degrade the long term reliability and the performance of the devices, therefore, it is important to monitor and control the change of the local residual stress. In this study, a stress sensor which was embedded in a silicon chip was developed by applying piezoresistance effect of single-crystalline silicon. Static and dynamic changes of the stress in a silicon chip were applied by bending beam test and the resistance change of the sensor gauge were monitored. The fabricated stress sensor responded quickly to the change of the local residual stress and a stress sensitivity was about 50 times higher than the most typical metallic strain gauges.</p>
収録刊行物
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- 年次大会
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年次大会 2017 (0), J0330202-, 2017
一般社団法人 日本機械学会
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詳細情報 詳細情報について
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- CRID
- 1390001205843284864
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- NII論文ID
- 130006550167
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- ISSN
- 24242667
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可