書誌事項
- タイトル別名
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- 10111 Droplet evaporation model on various film surface of Si wafers
抄録
The droplet evaporation process was categorized into two types, i.e. constant contact radius (CCR) and constant contact angle (CCA) types. The present study was aimed to construct the mathematical model to describe the droplet evaporation phenomena for CCR and CCA types. The mathematical model was developed by considering evaporation phenomena at the droplet edge. The change of droplet volumes predicted by the mathematical model were compared with the experimental data of droplet evaporation of Cu, Low-k, and Th-Ox wafers. As a result, it was confirmed that the result of developed model was in agreement with the experimental data.
収録刊行物
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- 日本機械学会関東支部総会講演会講演論文集
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日本機械学会関東支部総会講演会講演論文集 2015.21 (0), _10111-1_-_10111-2_, 2015
一般社団法人 日本機械学会
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キーワード
詳細情報 詳細情報について
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- CRID
- 1390001205846737536
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- NII論文ID
- 110009948151
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- ISSN
- 24242691
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
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- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可