書誌事項
- タイトル別名
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- Effect of Oxygen Partial Pressures on the Growth of Oxide Single Crystals by the Floating Zone Method(<Special Issue>Material Transport of Vapor-Liquid Interface during Crystal Growth and Effect on Crystal Quality)
- 解説 FZ法による酸化物単結晶育成における酸素分圧の影響
- カイセツ FZホウ ニ ヨル サンカブツタンケッショウ イクセイ ニ オケル サンソ ブンアツ ノ エイキョウ
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This review deals with effects of oxygen partial pressures on the crystal growth of oxides containing transition elements. Rutile (TiO_2) and chromium-doped forsterite (Cr: Mg_2SiO_4) single crystals are successfully grown by the floating zone method. Rutile single crystals are grown under a low oxygen partial pressure of about 10^3 Pa to avoid the formation of low-angle grain boundaries. Zirconium-doping is effective to grow rutile single crystals without low-angle grain boundaries and bubble inclusions at a high growth rate of 10 mm/h under a high oxygen partial pressure of 10^5 Pa. Cr^<4+>-rich Cr: Mg_2SiO_4 single crystals are grown under a high oxygen partial pressure of 1-2 10^5 Pa, which can not be realized in the conventional Czochralski method using an iridium crucible.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 27 (5), 288-292, 2000
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205862609920
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- NII論文ID
- 110002715442
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 5597569
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可