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- Park Jea-Gun
- Advanced Semiconductor Material & Device Development Center, Hanyang University
書誌事項
- タイトル別名
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- Advanced Czochralski Single Silicon Crystal Growth : Silicon(<Special Issue>Bulk Crystals for Human Activity in the New Millennium)
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説明
Pure silicon wafers are free of COPs, oxidation induced stacking fault ring, and interstitial silicon dislocation loops. Pure silicon single crystal ingot can be grown with satisfying 0.213<V/G<0.219 mm^2 min^<-1>K^<-1> along radi-al and axial direction of crystal growth using CZ crystal growth method. Nitrogen doping during the crystal growth of pure silicon ingot changes vacancy-rich region to abnormal oxygen precipitate region via the reaction between interstitial nitrogen and vacancy. In addition, nitrogen doping does not change the pull rate margin of pure silicon ingot growth.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 27 (2), 14-21, 2000
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205863894528
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- NII論文ID
- 110002715394
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 5458520
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可