Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy and Metalorganic Vapor Phase Epitaxy(<Special Issue>Crystal Growth of III-Group Nitride-Semiconductors)

DOI Web Site 19 References
  • Sasaoka C.
    Optelectonics and High Frequency Device Research Laboratories, NEC Corp.
  • Sunakawa H.
    Optelectonics and High Frequency Device Research Laboratories, NEC Corp.
  • Kimura A.
    Optelectonics and High Frequency Device Research Laboratories, NEC Corp.
  • Usui A.
    Optelectonics and High Frequency Device Research Laboratories, NEC Corp.
  • Sakai A.
    Fundamental Research Laboratories, NEC Corp

Bibliographic Information

Other Title
  • ハイドライドVPE,MOVPEによるGaN ELO成長(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)
  • ハイドライドVPE,MOVPEによるGaN ELO成長
  • ハイドライド VPE MOVPE ニヨル GaN ELO セイチョウ

Search this article

Description

We studied epitaxial lateral overgrowth (ELO) of GaN by hydride vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOVPE) to clarify the behavior of threading dislocations. It was found that the threading dislocations were greatly influenced by formation of facets at the initial growth stage. The epitaxial region with low dislocation density was successfully achieved by both HVPE and MOVPE combined with ELO, though the dislocation reduction mechanism was different between the two. Improvements in device performance on the low-dislocation-density substrate by HVPE are also described.

Journal

References(19)*help

See more

Details 詳細情報について

Report a problem

Back to top