ハイドライドVPE,MOVPEによるGaN ELO成長(<小特集>III族窒化物半導体の結晶成長はどこまで進んだか)

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  • Epitaxial Lateral Overgrowth of GaN by Hydride Vapor Phase Epitaxy and Metalorganic Vapor Phase Epitaxy(<Special Issue>Crystal Growth of III-Group Nitride-Semiconductors)
  • ハイドライドVPE,MOVPEによるGaN ELO成長
  • ハイドライド VPE MOVPE ニヨル GaN ELO セイチョウ

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We studied epitaxial lateral overgrowth (ELO) of GaN by hydride vapor phase epitaxy (HVPE) and metalorganic vapor phase epitaxy (MOVPE) to clarify the behavior of threading dislocations. It was found that the threading dislocations were greatly influenced by formation of facets at the initial growth stage. The epitaxial region with low dislocation density was successfully achieved by both HVPE and MOVPE combined with ELO, though the dislocation reduction mechanism was different between the two. Improvements in device performance on the low-dislocation-density substrate by HVPE are also described.

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