書誌事項
- タイトル別名
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- On the Measurements of Surface Tension of Molten Silicon : in Relation to the Controlof Oxygen Partial Pressure(<Special Issue> New Approaches for Bulk Cristal Growth)
- シリコン融液の表面張力測定--気相の酸素分圧制御を中心として
- シリコン ユウエキ ノ ヒョウメン チョウリョク ソクテイ キソウ ノ サンソ
この論文をさがす
説明
Previous studies on the measurements of surface tension of molten silicon containing our recent results were critically reviewed as follows: 1) brief discussions based on the Keene's review on the reported literature values of surface tension σ and its temperature coefficient dσ/dT mainly in relation to the effect of impurities, especially oxygen, by the contamination during the measurements of σ and dσ/dT, 2) short introduction and comments on the various methods for the surface tension measurement reported after the publication of Keene's review, 3) thermodynamic feature of the molten silicon-gas system concerning the relation between partial pressure P_<o2> of oxygen and SiO, and also the relation between oxygen concentration in the silicon and P_<o2>, etc., based on our results, 4) treatment of oxygen in the system for the surface tension measurements, for examples, the method and apparatus for controlling P_<o2> of the system and the quantitative influence of oxygen on σ and dσ/dT, which were obtained by our study.
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 23 (2), 93-99, 1996
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205864599168
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- NII論文ID
- 110002714603
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- NII書誌ID
- AN00188386
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- ISSN
- 21878366
- 03856275
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- NDL書誌ID
- 3974940
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可
