K35 Development of a High Pressure Chamber Type Double Side CMP Machine : CMP Characteristics of Si and SiC Wafers under Various Processing Atmospheres and Potential of Photocatalyst-assisted CMP

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  • K35 密閉耐圧チヤンバー型両面同時CMP装置の開発 : 各種加工雰囲気下でのsiおよびsicウエハのcMP特性と光触媒援用cMPの可能性について(K3 CMPII)

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