OS2406 A statistical study for distribution of local adhesion strength in semiconductor device metallization systems
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- CHEN Chuantong
- Department of Mechanical Engineering, Nagoya Institute of Technology
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- SHISHIDO Nobuyuki
- 名古屋工業大学
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- MATSUMOTO Satoru
- Department of Mechanical Engineering, Nagoya Institute of Technology
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- KAMIYA Shoji
- 名古屋工業大学
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- SATO Hisashi
- 名古屋工業大学
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- NISHIDA Masahiro
- 名古屋工業大学
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- OMIYA Masaki
- 慶應義塾大学:JST CREST
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- SUZUKI Takashi
- 富士通研究所
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- NAKAMURA Tomoji
- 富士通研究所
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- NAGASAWA Tadahiro
- 日本電子株式会社:JST CREST
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- NOKUO Takeshi
- 日本電子株式会社:JST CREST
Bibliographic Information
- Other Title
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- OS2406 半導体デバイス配線構造における局所付着強度分布の統計的評価の試み(OS24-2 三次元積層半導体チップにおけるシリコン貫通ビア/微細金属接合技術と強度信頼性,OS-24 三次元積層半導体チップにおけるシリコン貫通ビア/微細金属接合技術と強度信頼性)
Abstract
A technique to evaluate local interface strength measured a considerable range of scatter in toughness of interface between Cu and SiN cap layer in LSI interconnect. In order to estimate the range of uncertainty in the evaluation procedure, the same technique was applied to the interface of vapor-deposited Au and native SiO_2 on a silicon wafer, which was expected to have a relatively homogeneous adhesion strength. By combining the obtained results with the statistical analysis, uncertainties in the evaluation procedure were evaluated and excluded from the scatter in the measurement results of Cu/SiN interface. Finally, the intrinsic fluctuation of interface strength due to the material properties was successfully determined.
Journal
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- The Proceedings of the Materials and Mechanics Conference
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The Proceedings of the Materials and Mechanics Conference 2011 (0), _OS2406-1_-_OS2406-3_, 2011
The Japan Society of Mechanical Engineers
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Details 詳細情報について
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- CRID
- 1390001205873180928
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- NII Article ID
- 110009689297
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- ISSN
- 24242845
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- Text Lang
- ja
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
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- Abstract License Flag
- Disallowed