VB法によるβ-Ga<sub>2</sub>O<sub>3</sub>結晶成長

DOI

書誌事項

タイトル別名
  • β-Ga<sub>2</sub>O<sub>3</sub> Crystal Growth by the Vertical Bridgman Technique

抄録

<p>  A new approach to β-Ga2O3 single crystal growth was studied using a directional solidification process in a vertical Bridgman furnace in ambient air. The crucibles used were made of platinum-rhodium alloy as they are capable of withstanding high temperatures that exceed the melting temperature of β-Ga2O3 in ambient air.</p><p>   We succeeded in growing 1-inch diameter β-Ga2O3 single crystals with a growth direction perpendicular to an (100) faceted plane without a seed crystal. We have also grown β-Ga2O3 single crystals from seed crystals cut from the single crystals previously grown without seed crystals. It was found that β-Ga2O3 single crystals could be grown in platinum-rhodium alloy crucibles in ambient air, with no adhesion of the crystal to the crucible wall. Thus, we confirmed that our new approach could be useful for growing β-Ga2O3 single crystals.</p>

収録刊行物

詳細情報 詳細情報について

  • CRID
    1390001205896728576
  • NII論文ID
    130006327995
  • DOI
    10.19009/jjacg.5-44-4-03
  • ISSN
    21878366
    03856275
  • 本文言語コード
    ja
  • データソース種別
    • JaLC
    • CiNii Articles
  • 抄録ライセンスフラグ
    使用不可

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