VB法によるβ-Ga<sub>2</sub>O<sub>3</sub>結晶成長
書誌事項
- タイトル別名
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- β-Ga<sub>2</sub>O<sub>3</sub> Crystal Growth by the Vertical Bridgman Technique
抄録
<p> A new approach to β-Ga2O3 single crystal growth was studied using a directional solidification process in a vertical Bridgman furnace in ambient air. The crucibles used were made of platinum-rhodium alloy as they are capable of withstanding high temperatures that exceed the melting temperature of β-Ga2O3 in ambient air.</p><p> We succeeded in growing 1-inch diameter β-Ga2O3 single crystals with a growth direction perpendicular to an (100) faceted plane without a seed crystal. We have also grown β-Ga2O3 single crystals from seed crystals cut from the single crystals previously grown without seed crystals. It was found that β-Ga2O3 single crystals could be grown in platinum-rhodium alloy crucibles in ambient air, with no adhesion of the crystal to the crucible wall. Thus, we confirmed that our new approach could be useful for growing β-Ga2O3 single crystals.</p>
収録刊行物
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- 日本結晶成長学会誌
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日本結晶成長学会誌 44 (4), n/a-, 2017
日本結晶成長学会
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詳細情報 詳細情報について
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- CRID
- 1390001205896728576
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- NII論文ID
- 130006327995
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- ISSN
- 21878366
- 03856275
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可